? 2005 ixys all rights reserved g d s g = gate d = drain s = source tab = drain ds99376(08/05) polarhv tm power mosfet v dss = 600 v i d25 =26 a r ds(on) 270 m advance technical information n-channel enhancement mode fast recovery diode avalanche rated to-3p (ixtq) g d s d (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 30 v, v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 270 m pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c26a i dm t c = 25 c, pulse width limited by t jm 65 a i ar t c = 25 c26a e ar t c = 25 c40mj e as t c = 25 c 1.2 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 10 v/ns t j 150 c, r g = 5 p d t c = 25 c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c plastic body 250 c m d mounting torque (to-3p&to-247) 1. 13/10 nm/lb.in. f c mounting force (plus220) 11..65/2 .5..15 n/lb weight to-3p 5.5 g to-248 6.0 g to-268 5.0 g plus220 & plus220smd 4.0 g ixth 26n60p ixtq 26n60p ixtt 26n60p ixtv 26n60p ixtv 26n60ps to-268 (ixtt) g s d (tab) to-247 (ixth) advance technical information g s d (tab) plus220smd (ixtv_s) g s d plus220 (ixtv) d (tab) features z fast recovery diode z unclamped inductive switching (uis) rated z international standard packages z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density
ixys reserves the right to change limits, test conditions, and dimensions. ixth 26n60p ixtq 26n60p ixtv 26n60p ixtv 26n60ps ixtt 26n60p fig. 2. extended output characteristics @ 25 o c 0 6 12 18 24 30 36 42 48 54 60 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 0123 4567 v d s - volts i d - amperes v gs = 10v 7v 5v 6v symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 16 26 s c iss 4150 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 400 pf c rss 27 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 i d25 27 ns t d(off) r g = 5 (external) 75 ns t f 21 ns q g(on) 72 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 27 nc q gd 24 nc r thjc 0.27 k/w r thck to-3p, plus220 & to-247 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 26 a i sm repetitive 78 a v sd i f = i s , v gs = 0 v, pulse test 1.5 v t rr i f = 26a, -di/dt = 100 a/ s 400 ns q rm v r = 100v; v gs = 0 v 7 c characteristic curves ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2005 ixys all rights reserved fig. 3. output characteristics @ 125 o c 0 4 8 12 16 20 24 0 2 4 6 8 10 12 14 16 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 26a i d = 13a v gs = 10v fig. 6. drain current vs. case temperature 0 3 6 9 12 15 18 21 24 27 30 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1.2 1.6 2 2.4 2.8 3.2 0 102030405060 i d - amperes r d s ( o n ) - normalize d t j = 125 o c t j = 25 o c v gs = 10v fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 4 4.5 5 5.5 6 6.5 7 7.5 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c ixth 26n60p ixtq 26n60p ixtv 26n60p ixtv 26n60ps ixtt 26n60p
ixys reserves the right to change limits, test conditions, and dimensions. ixth 26n60p ixtq 26n60p ixtv 26n60p ixtv 26n60ps ixtt 26n60p fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030 4050607080 q g - nanocoulombs v g s - volts v ds = 300v i d = 13a i g = 10ma fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. maximum transient thermal resistance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w
? 2005 ixys all rights reserved to-268 (ixtt) outline to-3p (ixtq) outline d1 l l3 l1 e1 e e b d c a2 a1 a l2 terminals: 1 - gate 2 - drain 3 - source tab - drain e1 e l2 d l3 l l 1 3x b 2x e c a 2 a1 a e1 d1 plus220 (ixtv) outline l l3 l2 l1 a1 e1 e d1 e b d c a2 a a3 l4 terminals: 1 - gate 2 - drain 3 - source 4 (tab) - drain e e1 d l2 a a1 l 1 l l3 e 2x b c a 2 l 4 a 3 e1 plus220smd (ixtv_s) to-247 ad (ixth) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc 1 2 3 ixth 26n60p ixtq 26n60p ixtv 26n60p ixtv 26n60ps ixtt 26n60p
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